Search results for "Schottky contact"

showing 3 items of 3 documents

Electrical Characterization of CdTe pixel detectors with Al Schottky anode

2014

Abstract Pixelated Schottky Al/p-CdTe/Pt detectors are very attractive devices for high-resolution X-ray spectroscopic imaging, even though they suffer from bias-induced time instability (polarization). In this work, we present the results of the electrical characterization of a (4×4) pixelated Schottky Al/p-CdTe/Pt detector. Current–voltage ( I–V ) characteristics and current transients were investigated at different temperatures. The results show deep levels that play a dominant role in the charge transport mechanism. The conduction mechanism is dominated by the space charge limited current (SCLC) both under forward bias and at high reverse bias. Schottky barrier height of the Al/CdTe con…

PhysicspolarizationNuclear and High Energy PhysicsSchottky contactbusiness.industrySchottky barrierSettore FIS/01 - Fisica SperimentaleSchottky diodeCdTeThermal conductionSpace chargeCadmium telluride photovoltaicsSettore FIS/07 - Fisica Applicata(Beni Culturali Ambientali Biol.e Medicin)Settore FIS/03 - Fisica Della MateriaAnodeX-ray and gamma ray spectroscopypixel detectorOptoelectronicsPolarization (electrochemistry)businessCdTe; Schottky contacts; polarization; pixel detectors; X-ray and gamma ray spectroscopyInstrumentationVoltage
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Room-Temperature Electrical Characteristics of Pd∕SiC Diodes with Embedded Au Nanoparticles at the Interface

2010

We investigate the effects of localized controlled nanometric inhomogeneities, represented by Au nanoparticles, on the electrical properties of Pd/SiC Schottky diodes. In particular, we investigate the effects of the nanoparticle radius R on the current-voltage characteristics. The main result concerns the strong dependence of the effective Schottky barrier height of the Pd/SiC contact on R, giving a practical technique to tailor, in a wide range, such a barrier height by simply changing the process parameters during the diode preparation. Then, from a basic understanding point of view, such data allow us to test the Tung model describing the effects of inhomogeneities on the electrical pro…

SiCRange (particle radiation)Schottky contactMaterials sciencebusiness.industryAtomic force microscopyAu nanoparticleSchottky barrierInterface (computing)Schottky diodeNanoparticleRadiusSettore ING-INF/01 - ElettronicaSettore FIS/03 - Fisica Della MateriaPhysics and Astronomy (all)Electronic engineeringAuSchottky diodePdOptoelectronicsTung's modelAu; Pd; Schottky diodebusinessDiodeAIP Conference Proceedings
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Time-dependent current-voltage characteristics of Al/p-CdTe/Pt x-ray detectors

2012

Current-voltage (I-V) characteristics of Schottky Al/p-CdTe/Pt detectors were investigated in dark and at different temperatures. CdTe detectors with Al rectifying contacts, very appealing for high resolution x-ray and gamma ray spectroscopy, suffer from bias-induced polarization phenomena which cause current increasing with the time and severe worsening of the spectroscopic performance. In this work, we studied the time-dependence of the I-V characteristics of the detectors, both in reverse and forward bias, taking into account the polarization effects. The I-V measurements, performed at different time intervals between the application of the bias voltage and the measurement of the current…

X-ray spectroscopySchottky contactX-ray and gamma ray detectorsMaterials sciencebusiness.industrySettore FIS/01 - Fisica SperimentaleContact resistanceX-ray detectorGeneral Physics and AstronomySchottky diodeBiasingThermionic emissionSettore FIS/07 - Fisica Applicata(Beni Culturali Ambientali Biol.e Medicin)Settore FIS/03 - Fisica Della MateriaCdTe detectorPolarizationOptoelectronicsGamma spectroscopybusinessPolarization (electrochemistry)Journal of Applied Physics
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